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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1987 DESCRIPTION With TO-3PL package Complement to type 2SC5359 High collector voltage APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current SEM GE Open base CONDITIONS Open emitter OND IC TOR UC MAX -230 -230 -5 -15 -1.5 UNIT V V V A A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 180 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-7A ; VCE=-5V VCB=-230V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=-1A ; VCE=-5V IE=0,f=1MHz;VCB=-10V 55 35 MIN -230 2SA1987 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -1.5 -1.0 -3.0 -1.5 -5 -5 160 |I |I V V A A Collector output capacitance O 80-160 30 MHz pF hFE-1 classifications R 55-110 HAN INC SEM GE OND IC TOR UC 360 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1987 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.50 mm) 3 |
Price & Availability of 2SA1987
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